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Single Crystal Growth - Silicon Wafers and Microcircuits with Automation system control application on automate robot arm

Thermal Stability. Chemical Inertness. Crystal-Clear Results.

In high-temperature crystal growth - especially in the Czochralski process - precision and performance start at the material level. Kennametal’s hot-pressed boron nitride (hBN) ceramics provide outstanding thermal resistance and electrical insulation, enabling faster thermal cycles and superior lifetime performance compared to traditional oxide-based materials.

What Is the Czochralski Method?

The Czochralski method is a widely used process for growing large, high-purity single crystals, essential in the semiconductor, solar, and optical industries. Developed by Polish scientist Jan Czochralski in 1916, this technique allows precise control over crystal structure and purity, making it the industry standard for producing monocrystalline silicon wafers.

How the Czochralski Process Works?

In a Czochralski furnace, high-purity materials such as silicon are melted in a crucible at temperatures exceeding 1400°C. A small, oriented seed crystal is dipped into the molten material and slowly pulled upward while rotating. This controlled movement allows the molten material to solidify onto the seed, forming a single, cylindrical crystal known as a boule or ingot. The crucible may also rotate in the opposite direction to optimize heat distribution.

Applications of the Czochralski Method

The Czochralski method is the most common technique for producing monocrystalline silicon, which serves as the foundation for integrated circuitssmartphones, and solar cells. It is also used to grow synthetic gemstonessapphire, and optical crystals for high-performance applications.

Why Choose Kennametal hBN for Crystal Growing?

In crystal pulling systems operating above 1500°C under vacuum or inert atmospheres, Kennametal’s boron nitride products deliver a critical edge in reliability and productivity:

  • Stable at extreme temperatures – Our hBN grades perform in temperatures exceeding 1500°C under vacuum/inert atmospheres, where Al₂O₃ and SiO₂ begin to degrade or react.
  • hBN is an excellent electrical insulator. Dielectric strength of hBN is much better than Alumina.
  • Faster cycle times – hBN enables rapid heating and cooling, helping you shorten production cycles without sacrificing quality.
  • Longer tool life – Superior resistance to thermal shock and chemical attack means fewer component replacements and reduced downtime.

Common Applications in Czochralski Furnaces

Kennametal hBN ceramics are precision-machined for demanding roles within the furnace environment, including:

  • Insulating tubes for electrodes and heating systems
  • Washers and spacers for thermal and electrical insulation
  • Protection tubes for thermocouples in harsh environments

Recommended Grades for Single Crystal Growth

Our top-performing boron nitride materials for signle crystal-growing applications include:

  • BN6000, BN8000, and BN9000 – preferred for high thermal performance, minimal reactivity, and structural stability under thermal cycling.
  • BN5000 and BN7000 – suitable alternatives depending on application-specific requirements.

Whether you're producing silicon, sapphire, or compound crystals, Kennametal's hBN solutions are engineered to enhance purity, precision, and productivity in every batch.

Boron Nitride Machinable Ceramics

Check out our brochure for additional information.

View Technical Data

Boron Nitride Ceramic Components Data Sheet

Check out our data sheet for additional information.

View Technical Data
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